Optimization of MBE Growth Parameters for GaAs-based THz Quantum Cascade Lasers
نویسندگان
چکیده
Solid state terahertz (THz) lasers were made possible through the rapid progress in quantum cascade lasers (QCLs) [1]. Despite the advances in mid-infrared (MIR) QCLs [2], THz QCLs remain difficult to fabricate. The tolerances in alloy composition, layer thickness, and doping are lower for THz QCLs than their MIR counterparts. Typical THz structures can require more than a day to grow by MBE and a thickness change of a few percent will result in a non-lasing device.
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تاریخ انتشار 2007